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DMP6250SE-13

DMP6250SE-13-DIODES(美台)

  • TypeTriode/MOS transistor/transistor
  • ModelDMP6250SE-13
  • PackageSOT-223
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 3V@250uA Current 2.1A, power (Pd) 1.8W; 14W channel P conduction resistance (RDS (on) @ Vgs, Id) 250m Ω @ 10V, 1A package SOT-223 field-effect transistor (MOSFET) brand DIODES (Meitai) DMP6250SE-13 series DMP6250SE
  • PDF DMP6250SE-13.pdf
DMT10H015LSS-13

DMT10H015LSS-13-DIODES(美台)

  • TypeTriode/MOS transistor/transistor
  • ModelDMT10H015LSS-13
  • PackageSO-8
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 100V threshold voltage (Vgs (th) @ Id) 3.5V@250uA Current 8.3A Power (Pd) 1.2W Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 16m Ω @ 10V, 20A Package SO-8 MOSFET Brand DIODES (Meitai) DMT10H015LSS-13 Series DMT10H015LSS
  • PDF DMT10H015LSS-13.pdf
DMP3098LSS-13

DMP3098LSS-13-DIODES(美台)

  • TypeTriode/MOS transistor/transistor
  • ModelDMP3098LSS-13
  • PackageSOP-8
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 2.1V@250uA Current 5.3A Power (Pd) 2.5W Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 65m Ω @ 10V, 5.3A Package SOP-8 MOSFET Brand DIODES (American) DMP3098LSS-13 Series DMP3098LSS
  • PDF DMP3098LSS-13.pdf
DMN3731UFB4-7B

DMN3731UFB4-7B-DIODES(美台)

  • TypeTriode/MOS transistor/transistor
  • ModelDMN3731UFB4-7B
  • PackageX2-DFN1006-3
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 950mV@250uA Current 1.2A Power (Pd) 520mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 460m Ω @ 200mA, 4.5V Package X2-DFN1006-3 MOSFET Brand DIODES DMN3731UFB4-7B Series DMN3731UFB4
  • PDF DMN3731UFB4-7B.pdf
DMTH4007LPSQ-13

DMTH4007LPSQ-13-DIODES(美台)

  • TypeTriode/MOS transistor/transistor
  • ModelDMTH4007LPSQ-13
  • PackagePowerDI5060-8
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 40V threshold voltage (Vgs (th) @ Id) 3V@250uA Current 15.5A; 100A power (Pd) 150W; 2.7W channel N conduction resistance (RDS (on) @ Vgs, Id) 2 Ω @ 4V, 100mA package PowerDI5060-8 MOSFET brand DIODES (Meitai) DMTH4007LPSQ-13 series DMTH4007LPSQ
  • PDF DMTH4007LPSQ-13.pdf
DMN62D0LFD-7

DMN62D0LFD-7-DIODES(美台)

  • TypeTriode/MOS transistor/transistor
  • ModelDMN62D0LFD-7
  • PackageX1-DFN1212-3
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 1V@250uA Current 310mA Power (Pd) 480mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 2 Ω @ 4V, 100mA Package X1-DFN1212-3 MOSFET Brand DIODES DMN62D0LFD-7 Series DMN62D0LFD
  • PDF DMN62D0LFD-7.pdf
DMTH8012LPSQ-13

DMTH8012LPSQ-13-DIODES(美台)

  • TypeTriode/MOS transistor/transistor
  • ModelDMTH8012LPSQ-13
  • PackageTDFN-8-Power
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 80V threshold voltage (Vgs (th) @ Id) 3V@250uA Current 72A; 10A power (Pd) 136W; 2.6W channel N conduction resistance (RDS (on) @ Vgs, Id) 17m Ω @ 12A, 10V package TDFN-8-Power MOSFET brand DIODES (Meitai) DMTH8012LPSQ-13 series DMTH8012LPSQ
  • PDF DMTH8012LPSQ-13.pdf
DMC3021LSD-13

DMC3021LSD-13-DIODES(美台)

  • TypeTriode/MOS transistor/transistor
  • ModelDMC3021LSD-13
  • PackageSOIC-8
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 2.1V@250uA Current 8.5A; 7A power (Pd) 2.5W channel 1 N and 1 P conduction resistor (RDS (on) @ Vgs, Id) 21m Ω @ 7A, 10V package SOIC-8 field-effect transistor (MOSFET) brand DIODES (American) DMC3021LSD-13 series DMC3021LSD
  • PDF DMC3021LSD-13.pdf
VN10LFTA

VN10LFTA-DIODES(美台)

  • TypeTriode/MOS transistor/transistor
  • ModelVN10LFTA
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 2.5V@1mA Current 150mA Power (Pd) 330mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 5 Ω @ 10V, 500mA Package SOT-23 MOSFET Brand DIODES (American) VN10LFTA Series VN10LFTA
  • PDF VN10LFTA.pdf
ZXMN10A08GTA

ZXMN10A08GTA-DIODES(美台)

  • TypeTriode/MOS transistor/transistor
  • ModelZXMN10A08GTA
  • PackageSOT-223
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 100V threshold voltage (Vgs (th) @ Id) 2V@250uA Current 2A Power (Pd) 2W Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 250m Ω @ 10V, 3.2A Package SOT-223 MOSFET Brand DIODES (USA) ZXMN10A08GTA Series ZXMN10A08GTA
  • PDF ZXMN10A08GTA.pdf
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