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IS34ML01G084-TLI

IS34ML01G084-TLI-ISSI(美国芯成)

  • TypeNAND FLASH
  • ModelIS34ML01G084-TLI
  • PackageTSOP-48
  • ManufacturerISSI(美国芯成)
  • DescriptionStorage capacity 1Gb Memory organization 128M x 8 clock frequency voltage 2.7V~3.6V Operating temperature -40 ° C~85 ° C (TA) Package TSOP-48 NAND FLASH brand ISSI (American Semiconductor) model IS34ML01G084-TLI
  • PDF IS34ML01G084-TLI.pdf
Consultation
IS21ES64G-JCLI

IS21ES64G-JCLI-ISSI(美国芯成)

  • TypeNAND FLASH
  • ModelIS21ES64G-JCLI
  • PackageVFBGA-153(11.5x13)
  • ManufacturerISSI(美国芯成)
  • DescriptionStorage capacity 512Gb Memory organization 64G x 8 Clock frequency 200 MHz Voltage 2.7V~3.6V Operating temperature -40 ° C~85 ° C (TA) Package VFBGA-153 (11.5x13) NAND FLASH Brand ISSI (American Semiconductor) Model IS21ES64G-JCLI
  • PDF IS21ES64G-JCLI.pdf
Consultation
KLMCG4JETD-B041

KLMCG4JETD-B041-SAMSUNG(三星)

  • TypeNAND FLASH
  • ModelKLMCG4JETD-B041
  • PackageBGA153
  • ManufacturerSAMSUNG(三星)
  • DescriptionStorage capacity 64 GB Memory organization 8G x 8 clock frequency voltage 1.8/3.3 V Operating temperature -25~85 ° C Packaging BGA153 NAND FLASH brand SAMSUNG (Samsung Semiconductor) model KLMCG4JETD-B041
  • PDF KLMCG4JETD-B041.pdf
Consultation
GD5F1GQ5UEYIGR

GD5F1GQ5UEYIGR-GigaDevice(兆易创新)

  • TypeNAND FLASH
  • ModelGD5F1GQ5UEYIGR
  • PackageWSON-8-EP(6x8)
  • ManufacturerGigaDevice(兆易创新)
  • DescriptionStorage capacity 1Gb Memory organization 256M x 4 Clock frequency 133 MHz Voltage 2.7V~3.6V Operating temperature -40 ° C~85 ° C (TA) Package WSON-8-EP (6x8) NAND FLASH Brand GigaDevice Model GD5F1GQ5UEYIGR
  • PDF GD5F1GQ5UEYIGR.pdf
Consultation
GD5F2GQ5UEYIGR

GD5F2GQ5UEYIGR-GigaDevice(兆易创新)

  • TypeNAND FLASH
  • ModelGD5F2GQ5UEYIGR
  • PackageWSON-8-EP(6x8)
  • ManufacturerGigaDevice(兆易创新)
  • DescriptionStorage capacity 2Gb Memory organization 256M x 8 Clock frequency 104 MHz Voltage 2.7V~3.6V Operating temperature -40 ° C~85 ° C (TA) Package WSON-8-EP (6x8) NAND FLASH Brand GigaDevice (Mega Innovation) Model GD5F2GQ5UEYIGR
  • PDF GD5F2GQ5UEYIGR.pdf
Consultation
GD5F1GQ5REYIGR

GD5F1GQ5REYIGR-GigaDevice(兆易创新)

  • TypeNAND FLASH
  • ModelGD5F1GQ5REYIGR
  • PackageWSON-8-EP(6x8)
  • ManufacturerGigaDevice(兆易创新)
  • DescriptionStorage capacity 1Gb Memory organization 256M x 4 Clock frequency 104 MHz Voltage 1.7V~2V Operating temperature -40 ° C~85 ° C (TA) Package WSON-8-EP (6x8) NAND FLASH Brand GigaDevice Model GD5F1GQ5REYIGR
  • PDF GD5F1GQ5REYIGR.pdf
Consultation
GD5F1GQ4UBYIGR

GD5F1GQ4UBYIGR-GigaDevice(兆易创新)

  • TypeNAND FLASH
  • ModelGD5F1GQ4UBYIGR
  • PackageWSON-8-EP(6x8)
  • ManufacturerGigaDevice(兆易创新)
  • DescriptionStorage capacity 1Gb Memory organization 256M x 4 Clock frequency voltage 2.7-3.6V Operating temperature -40 ° C~85 ° C (TA) Package WSON-8-EP (6x8) NAND FLASH brand GigaDevice model GD5F1GQ4UBYIGR
  • PDF GD5F1GQ4UBYIGR.pdf
Consultation
GD9FU1G8F2AMGI

GD9FU1G8F2AMGI-GigaDevice(兆易创新)

  • TypeNAND FLASH
  • ModelGD9FU1G8F2AMGI
  • PackageTSOP-48-12.0mm
  • ManufacturerGigaDevice(兆易创新)
  • DescriptionStorage capacity 1Gb memory organization 128M x 8 clock frequency voltage 2.7-3.6V working temperature -40 ° C~85 ° C (TA) package TSOP-48-12.0mm NAND FLASH brand GigaDevice model GD9FU1G8F2AMGI
  • PDF GD9FU1G8F2AMGI.pdf
Consultation
GD5F1GQ4RB9IGR

GD5F1GQ4RB9IGR-GigaDevice(兆易创新)

  • TypeNAND FLASH
  • ModelGD5F1GQ4RB9IGR
  • PackageLGA-8(6x8)
  • ManufacturerGigaDevice(兆易创新)
  • DescriptionStorage capacity 1Gb Memory organization 128M x 8 Clock frequency voltage 1.7V~2.0V Operating temperature -40 ° C~85 ° C (TA) Package LGA-8 (6x8) NAND FLASH GigaDevice (Mega Innovation) model GD5F1GQ4RB9IGR
  • PDF GD5F1GQ4RB9IGR.pdf
Consultation
TC58NVG1S3HTAI0

TC58NVG1S3HTAI0-KIOXIA(铠侠)

  • TypeNAND FLASH
  • ModelTC58NVG1S3HTAI0
  • PackageTSOP-48
  • ManufacturerKIOXIA(铠侠)
  • DescriptionStorage capacity 2Gb memory organization 256M x 8 clock frequency voltage 2.7V~3.6V working temperature -40 ° C~85 ° C (TA) packaging TSOP-48 NAND FLASH brand KIOXIA (Armor) model TC58NVG1S3HTAI0
  • PDF TC58NVG1S3HTAI0.pdf
Consultation
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