On July 24, Sanan Semiconductor announced the arrival of equipment at its second chip plant, M6B, marking the imminent launch of the second phase of its silicon carbide (SiC) project. This milestone lays a solid foundation for the accelerated deployment of 8-inch SiC industrialization and the formal start of production lines.

Sanan Semiconductor's Hunan SiC project has a total investment of 16 billion RMB, aiming to establish a vertically integrated mass production platform compatible with both 6-inch and 8-inch SiC. Upon reaching full production capacity, the project will have the capability to manufacture 360,000 6-inch SiC wafers and 480,000 8-inch SiC wafers annually. According to Sanan Semiconductor's plans, by December this year, M6B will achieve a successful line activation, with 8-inch SiC chips officially entering mass production. This transformation will position Hunan Sanan Semiconductor as a vertically integrated manufacturer of 8-inch SiC.

The arrival of M6B equipment marks a significant milestone in the second phase of the Hunan Sanan SiC project, signaling the countdown to mass production of 8-inch SiC chips. This move will not only enhance Sanan Semiconductor's competitiveness in the SiC market but also drive the development of the domestic SiC industry. Sanan Semiconductor aims to achieve efficient SiC wafer manufacturing through a vertically integrated production model, meeting the market's demand for high-performance power semiconductors.

Meanwhile, Sanan Semiconductor's SiC project in Chongqing is also making steady progress. The Chongqing Sanan STMicroelectronics SiC project has a total planned investment of approximately 30 billion RMB. Upon reaching full production capacity, it will become the first 8-inch SiC substrate and wafer manufacturing line in the country, with an annual production capacity of 480,000 8-inch SiC substrates and automotive-grade MOSFET power chips. The project is expected to generate annual revenue of 17 billion RMB. The successful implementation of this project will further strengthen Sanan Semiconductor's leadership in the global SiC market.

With the increasing demand for high-efficiency power semiconductors in electric vehicles, 5G communications, renewable energy generation, and other fields, SiC materials, with their high voltage resistance, high frequency, and high-temperature characteristics, have become the focus of market attention. By investing heavily and strategically positioning itself, Sanan Semiconductor has gained a crucial edge in this key market. The progress of the Hunan and Chongqing projects will not only enhance the company's technical strength and market share but also drive the overall development of the Chinese SiC industry, strengthening the self-sufficiency of the domestic semiconductor supply chain.

Sanan Semiconductor's progress in the Hunan and Chongqing SiC projects signifies a major breakthrough in its strategic positioning in the SiC market. With the arrival of M6B equipment and the imminent mass production of 8-inch SiC chips, Sanan Semiconductor will further consolidate its leading position in the global SiC market, contributing to the rise of the Chinese semiconductor industry. In the future, Sanan Semiconductor will continue to increase its R&D investment, promote technological innovation, and support the development and transformation of the global electronics industry.