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W9864G6KH-6 Winbond Electronics-Hxcy.IC

2025/9/21 6:57:42

W9864G6KH-6

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W9864G6KH is a high-speed synchronous dynamic random access memory (SDRAM) organized as 1M words x4 memory banks x16 bits. W9864G6KH provides a data bandwidth of up to 200M words per second. According to different applications, W9864G6KH is divided into the following speed levels: -5, -6, -61, and -7. -Level 5 components can operate up to 200MHz/CL3. -6 and -6l grade parts can operate up to 166MHz/CL3 (-61 industrial grade, guaranteed to support -40 ° C~85 ° C). -The 7th level component can operate up to 143MHz/CL3 with tRP=18nS.
Access to SDRAM is burst oriented. When selecting storage and rows through the ACTION command, consecutive storage locations within a page can be accessed with burst lengths of 1, 2, 4, 8, or the entire page. The column address is automatically generated by the internal counter of SDRAM during burst operations. Random column reading can also be performed by providing its address in each clock cycle.
The multi bank nature enables internal banks to intertwine with each other to conceal pre charge times. By having programmable mode registers, the system can change the burst length, delay period, interleaving, or sequential burst to maximize its performance. W9864G6KH is an ideal choice for main memory in high-performance applications.
2. Characteristics
-5. The power supply for the -6 and -61 speed levels is 3.3V ± 0.3V
2.7V~3.6V, Suitable for -7-speed power supply
Clock frequency up to 200 MHz
1048576 words x 4 storage banks x 16 bit organization
Self refresh current: standard and low-power consumption
CAS Delay: 2 and 3
Continuous shooting length: 1, 2, 4, 8 and full page
Sequential and staggered bursts
Byte data is controlled by LDQM and UDQM
Automatic pre charging and controlled pre charging
Sudden read, single write mode
4K refresh cycle/64 milliseconds
Interface: LVTTL
Using RoHS compliant lead-free materials and TSOP II 54 pin 400 mil packaging

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