2025/8/11 1:21:28
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MT40A256M16GE-083EIT: B is a DDR4 SDRAM (Double Data Rate Fourth Generation Synchronous Dynamic Random Access Memory) chip produced by Micron Technology. The following will discuss its capacity and organizational form, electrical characteristics, performance parameters, functional characteristics, application fields, and other dimensions of capacity and organizational form
Storage capacity: The total capacity is 4Gb, achieved through a 256M (megabit) row address and a 16 bit data bus width, that is, a 256M x 16 bit organizational form, which can provide large data storage and processing capabilities.
Data bus width: A 16 bit data bus width means that 16 bits of data can be transmitted simultaneously in each clock cycle, which helps improve data transmission efficiency.
Electrical characteristics
Working voltage: The core voltage VDD and VDDQ are both 1.2V ± 60mV, and the power supply voltage range is between 1.14V and 1.26V, which can tolerate voltage fluctuations to a certain extent and ensure the stable operation of the chip.
VPP voltage: The VPP voltage is 2.5V, with an allowable fluctuation range of -125mV/+250mV, providing suitable voltage for some special operations inside the chip.
performance parameter
Clock frequency: The clock frequency of this chip can reach 1.2GHz, with a data transmission rate of DDR4-2400MHz, which can meet the requirements of high-speed data processing and transmit more data per unit time.
Temperature range: The working temperature range is -40 ° C to+95 ° C, with a wide working temperature range to adapt to different application environments.
function characteristics
Data preprocessing: Supports 8n bit prefetching architecture, which can prefetching multiple data bits in each clock cycle to improve data access efficiency; It has both programmable data gating preamble and data gating preamble training functions, which can optimize the timing of data transmission.
Read and write control: It has command/address latency (CAL), multi-purpose register read and write capabilities, and write balancing function, which helps to accurately control data read and write operations, ensuring data accuracy and integrity.
Power Management: Supports power management functions such as self refresh mode, low-power automatic self refresh (LP ASR), and temperature controlled refresh (TCR), which can reduce low power consumption in different working states, extend device battery life, or reduce energy consumption.
Data verification: Provides data bus inversion (DBI), command/address (CA) parity, data bus write cycle redundancy check (CRC) and other data verification and protection mechanisms, which can detect and correct errors that occur during data transmission and improve data reliability.
application area
In the field of computer science, it can be used for desktop computers, laptops, etc., providing fast memory support for operating systems and applications, improving system running speed and responsiveness.
Server field: It can meet the demand of servers for large capacity and high-speed memory, support servers to process a large number of concurrent requests simultaneously, and ensure the stable operation and efficient data processing of servers.
Network devices, such as routers and switches, are used to cache network data, optimize data forwarding and processing, and improve the performance and throughput of network devices.
Embedded systems: In embedded systems such as industrial control, smart homes, and smart security, reliable data storage and high-speed data transmission are provided to meet the various functional requirements of embedded devices.
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