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The MB85RC256V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.
Unlike SRAM, the MB85RC256V is able to retain data without using a data backup battery.
The read/ write endurance of the nonvolatile memory cells used for the MB85RC256V has improved to be at least 10¹² cycles, significantly outperforming other nonvolatile memory products in the number.
The MB85RC256V does not need a polling sequence after writing to the memory such as the case of Flash memory or E²PROM.

FEATURES
·Bit configuration :32,768 words×8 bits
·Two-wire serial interface : Fully controllable by two ports: serial clock (SCL) and serial data (SDA).
·Operating frequency :1 MHz (Max)
·Read/ write endurance :10¹² times/ byte
·Data retention :10 years(+85℃),95 years (+55℃), over 200 years (+35℃)
·Operating power supply voltage:2.7 V to 5.5 V
·Low-power consumption : Operating power supply current 200μA (Max @1 MHz)
Standby current 27 μA (Typ)
·Operation ambient temperature range
: -40°C to +85°C
·Package :8-pin plastic SOP (FPT-8P-M02)
8-pin plastic SOP (FPT-8P-M08)
Both are RoHS compliant