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IPP051N15N5 Infineon Technologies-Hxcy.IC

2025/7/15 15:40:48

IPP051N15N5

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OptiMOS™5 Power-Transistor,150 V
Features
·Excellent gate charge x RDS(on) product (FOM)
·Very low on-resistance RDS(on)
·Very low reverse recovery charge (Qrr)
·175℃ operating temperature
·Pb- free lead plating; RoHS compliant
·Qualified according to JEDEC¹) for target application
·Ideal for high- frequency switching and Synchronous rectification
·Halogen- free according to IEC61249-2-21

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