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MICRONE(南京微盟)

MICRONE(南京微盟)

MEL7112PG-N

MEL7112PG-N-MICRONE(南京微盟)

  • TypeLED driver
  • ModelMEL7112PG-N
  • PackageSOT-89
  • ManufacturerMICRONE(南京微盟)
  • DescriptionUndervoltage protection 2.5V input voltage 2.7-5.5V output current 120mA standby current 140uA thermal shutdown protection 140 ℃ high-precision 5% packaging SOT-89 (linear constant current) LED driver chip brand MICRONE Nanjing Weimeng MEL7112PG-N series MEL7112
  • PDF MEL7112PG-N.pdf
Consultation
MEL7126PG-N

MEL7126PG-N-MICRONE(南京微盟)

  • TypeLED driver
  • ModelMEL7126PG-N
  • PackageSOT-89
  • ManufacturerMICRONE(南京微盟)
  • DescriptionUndervoltage protection 2.5V input voltage 2.7-5.5V output current 260mA standby current 140uA thermal shutdown protection 140 ℃ high-precision 5% packaging SOT-89 (linear constant current) LED driver chip brand MICRONE Nanjing Weimeng MEL7126PG-N series MEL7126
  • PDF MEL7126PG-N.pdf
Consultation
ME8608BDSPG-N

ME8608BDSPG-N-MICRONE(南京微盟)

  • TypeLED driver
  • ModelME8608BDSPG-N
  • PackageSOP-8-EP
  • ManufacturerMICRONE(南京微盟)
  • DescriptionVoltage withstand 580V, input voltage 5.0V, output current 5-60mA, power consumption 1.98W, operating temperature range -40 85, packaged SOP-8-EP (single channel linear constant current), LED driver chip brand MICRONE Nanjing Weimeng ME8608BDSPG-N series ME8608
  • PDF ME8608BDSPG-N.pdf
Consultation
MEM2301XG

MEM2301XG-MICRONE(南京微盟)

  • TypeField effect transistor (MOSFET)
  • ModelMEM2301XG
  • PackageSOT-23
  • ManufacturerMICRONE(南京微盟)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 1V@250uA Current 2.8A Power (Pd) 700mW Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 110m Ω @ 4.5V, 2.8A Package SOT-23 MOSFET Brand MICRONE Nanjing Weimeng MEM2301XG Series MEM2301
  • PDF MEM2301XG.pdf
Consultation
MEM2302XG

MEM2302XG-MICRONE(南京微盟)

  • TypeField effect transistor (MOSFET)
  • ModelMEM2302XG
  • PackageSOT-23
  • ManufacturerMICRONE(南京微盟)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 850mV@250uA Current 3A power (Pd) 700mW channel N conduction resistance (RDS (on) @ Vgs, Id) 50m Ω @ 4.5V, 3A package SOT-23 field-effect transistor (MOSFET) brand MICRONE Nanjing Weimeng MEM2302XG series MEM2302
  • PDF MEM2302XG.pdf
Consultation
MEM2310XG

MEM2310XG-MICRONE(南京微盟)

  • TypeField effect transistor (MOSFET)
  • ModelMEM2310XG
  • PackageSOT-23
  • ManufacturerMICRONE(南京微盟)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 1.4V@250uA Current 5.8A Power (Pd) 1.4W Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 25m Ω @ 10V, 5.8A Package SOT-23 MOSFET Brand MICRONE Nanjing Weimeng MEM2310XG Series MEM2310
  • PDF MEM2310XG.pdf
Consultation
MEM2303M3G

MEM2303M3G-MICRONE(南京微盟)

  • TypeField effect transistor (MOSFET)
  • ModelMEM2303M3G
  • PackageSOT-23-3
  • ManufacturerMICRONE(南京微盟)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 1.3V@250uA Current 4.2A Power (Pd) 1.4W Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 58m Ω @ 10V, 4.2A Package SOT-23-3 MOSFET Brand MICRONE Nanjing Weimeng MEM2303M3G Series MEM2303
  • PDF MEM2303M3G.pdf
Consultation
MEM2310M3G

MEM2310M3G-MICRONE(南京微盟)

  • TypeField effect transistor (MOSFET)
  • ModelMEM2310M3G
  • PackageSOT-23-3
  • ManufacturerMICRONE(南京微盟)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 1.4V@250uA Current 5.8A Power (Pd) 1.4W Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 30m Ω @ 10V, 5.8A Package SOT-23-3 MOSFET Brand MICRONE Nanjing Weimeng MEM2310M3G Series MEM2310
  • PDF MEM2310M3G.pdf
Consultation
MEM2302M3G

MEM2302M3G-MICRONE(南京微盟)

  • TypeField effect transistor (MOSFET)
  • ModelMEM2302M3G
  • PackageSOT-23-3
  • ManufacturerMICRONE(南京微盟)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 850mV@250uA Current 3A Power (Pd) 700mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 50m Ω @ 4.5V, 3A Package SOT-23-3 MOSFET Brand MICRONE Nanjing Weimeng MEM2302M3G Series MEM2302
  • PDF MEM2302M3G.pdf
Consultation
MEM2307XG

MEM2307XG-MICRONE(南京微盟)

  • TypeField effect transistor (MOSFET)
  • ModelMEM2307XG
  • PackageSOT-23
  • ManufacturerMICRONE(南京微盟)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 2V@250uA Current 4.1A Power (Pd) 1.4W Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 88m Ω @ 10V, 4.1A Package SOT-23 MOSFET Brand MICRONE Nanjing Weimeng MEM2307XG Series MEM2307
  • PDF MEM2307XG.pdf
Consultation
MEM2307M3G

MEM2307M3G-MICRONE(南京微盟)

  • TypeField effect transistor (MOSFET)
  • ModelMEM2307M3G
  • PackageSOT-23-3
  • ManufacturerMICRONE(南京微盟)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 2V@250uA Current 4.1A Power (Pd) 1.4W Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 88m Ω @ 10V, 4.1A Package SOT-23-3 MOSFET Brand MICRONE Nanjing Weimeng MEM2307M3G Series MEM2307
  • PDF MEM2307M3G.pdf
Consultation
MEM2302XG-N

MEM2302XG-N-MICRONE(南京微盟)

  • TypeField effect transistor (MOSFET)
  • ModelMEM2302XG-N
  • PackageSOT-23
  • ManufacturerMICRONE(南京微盟)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 850mV@250uA Current 3A power (Pd) 700mW channel N conduction resistance (RDS (on) @ Vgs, Id) 50m Ω @ 4.5V, 3A package SOT-23 field-effect transistor (MOSFET) brand MICRONE Nanjing Weimeng MEM2302XG-N series MEM2302
  • PDF MEM2302XG-N.pdf
Consultation
MEM2402K3G

MEM2402K3G-MICRONE(南京微盟)

  • TypeField effect transistor (MOSFET)
  • ModelMEM2402K3G
  • PackageTO-252
  • ManufacturerMICRONE(南京微盟)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 2.2V@250uA Current 15A Power (Pd) 23W Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 36m Ω @ 10V, 12A Package TO-252 MOSFET Brand MICRONE Nanjing Weimeng MEM2402K3G Series MEM2402
  • PDF MEM2402K3G.pdf
Consultation
MEM4N60A3G

MEM4N60A3G-MICRONE(南京微盟)

  • TypeField effect transistor (MOSFET)
  • ModelMEM4N60A3G
  • PackageTO-220F
  • ManufacturerMICRONE(南京微盟)
  • DescriptionVoltage withstand 600V threshold voltage (Vgs (th) @ Id) RDS (ON)=2.3 Ω @ VGS=10V current 4A power (Pd) 33W channel N gate threshold voltage 4.0V packaging "TO-220F" MOSFET brand MICRONE Nanjing Weimeng MEM4N60A3G series MEM4N60
  • PDF MEM4N60A3G.pdf
Consultation
MEM12N65A3G

MEM12N65A3G-MICRONE(南京微盟)

  • TypeField effect transistor (MOSFET)
  • ModelMEM12N65A3G
  • PackageTO-220F
  • ManufacturerMICRONE(南京微盟)
  • DescriptionVoltage withstand 650V threshold voltage (Vgs (th) @ Id) RDS (ON)=0.64 Ω @ VGS=10V current 12A power (Pd) 51W channel N gate threshold voltage 4.0V packaging "TO-220F" MOSFET brand MICRONE Nanjing Weimeng MEM12N65A3G series MEM12N65
  • PDF MEM12N65A3G.pdf
Consultation
MEM2313SG

MEM2313SG-MICRONE(南京微盟)

  • TypeField effect transistor (MOSFET)
  • ModelMEM2313SG
  • PackageSOP-8
  • ManufacturerMICRONE(南京微盟)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 2V@250uA Current 6A, power (Pd) 1W, channel 2 P-conducting resistors (RDS (on) @ Vgs, Id) 65m Ω @ 10V, 6A package SOP-8 field-effect transistor (MOSFET) brand MICRONE Nanjing Weimeng MEM2313SG series MEM2313
  • PDF MEM2313SG.pdf
Consultation
MEM2N60A3G

MEM2N60A3G-MICRONE(南京微盟)

  • TypeField effect transistor (MOSFET)
  • ModelMEM2N60A3G
  • PackageTO-220F
  • ManufacturerMICRONE(南京微盟)
  • DescriptionWithstand voltage 600V (Vgs (th) @ Id) TO-220F current 2A power (Pd) 41W channel N gate threshold voltage VGS (th) 4.0V package TO-220F field-effect transistor (MOSFET) brand MICRONE Nanjing Weimeng MEM2N60A3G series MEM2N60
  • PDF MEM2N60A3G.pdf
Consultation
MEM2306SG

MEM2306SG-MICRONE(南京微盟)

  • TypeField effect transistor (MOSFET)
  • ModelMEM2306SG
  • PackageSOP-8
  • ManufacturerMICRONE(南京微盟)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 1V@250uA Current 5A power (Pd) 1.3W channel 2 N conduction resistors (RDS (on) @ Vgs, Id) 23m Ω @ 4.5V, 6A package SOP-8 field-effect transistor (MOSFET) brand MICRONE Nanjing Weimeng MEM2306SG series MEM2306
  • PDF MEM2306SG.pdf
Consultation
ME6211C33M5G-N

ME6211C33M5G-N-MICRONE(南京微盟)

Consultation
ME6211C18M5G-N

ME6211C18M5G-N-MICRONE(南京微盟)

Consultation
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