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ST(意法半导体)

ST(意法半导体)

STB80NF10T4

STB80NF10T4-ST(意法半导体)

  • TypeField effect transistor (MOSFET)
  • ModelSTB80NF10T4
  • PackageD2PAK
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STB80NF10T4封装D2PAK类型1个N沟道漏源电压(Vdss)100V连续漏极电流(Id)80A功率(Pd)300W导通电阻(RDS(on)@Vgs,Id)15mΩ@10V,40A阈值电压(Vgs(th)@Id)4V@250uA栅极电荷(Qg@Vgs)182nC@10V输入电容(Ciss@Vds)5.5nF@25V工作温度-5…
  • PDF STB80NF10T4.pdf
Consultation
STP8N120K5

STP8N120K5-ST(意法半导体)

  • TypeField effect transistor (MOSFET)
  • ModelSTP8N120K5
  • PackageTO-220
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STP8N120K5封装TO-220类型1个N沟道漏源电压(Vdss)1.2kV连续漏极电流(Id)6A功率(Pd)130W导通电阻(RDS(on)@Vgs,Id)2Ω@10V,2.5A阈值电压(Vgs(th)@Id)5V@100uA
  • PDF STP8N120K5.pdf
Consultation
STL110N10F7

STL110N10F7-ST(意法半导体)

  • TypeField effect transistor (MOSFET)
  • ModelSTL110N10F7
  • PackagePowerFLAT-8(5x6)
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STL110N10F7封装PowerFLAT-8(5x6)FET 类型N 通道技术MOSFET（金属氧化物）漏源电压（Vdss）100 V25°C 时电流 - 连续漏极 (Id)107A（Tc）驱动电压（最大 Rds On，最小 Rds On）10V不同 Id、Vgs 时导通电阻（最大值）6 毫欧 @…
  • PDF STL110N10F7.pdf
Consultation
STF2N95K5

STF2N95K5-ST(意法半导体)

  • TypeField effect transistor (MOSFET)
  • ModelSTF2N95K5
  • PackageTO-220F-3
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STF2N95K5封装TO-220F-3类型1个N沟道漏源电压(Vdss)950V连续漏极电流(Id)2A功率(Pd)20W导通电阻(RDS(on)@Vgs,Id)5Ω@10V,1A阈值电压(Vgs(th)@Id)5V@100uA
  • PDF STF2N95K5.pdf
Consultation
STD2NK100Z

STD2NK100Z-ST(意法半导体)

  • TypeField effect transistor (MOSFET)
  • ModelSTD2NK100Z
  • PackageTO-252-2(DPAK)
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STD2NK100Z封装TO-252-2(DPAK)类型1个N沟道漏源电压(Vdss)1kV连续漏极电流(Id)1.85A功率(Pd)70W导通电阻(RDS(on)@Vgs,Id)8.5Ω@10V,900mA阈值电压(Vgs(th)@Id)4.5V@50uA栅极电荷(Qg@Vgs)16nC@10V输入电容(Ciss@Vds)499pF@25V…
  • PDF STD2NK100Z.pdf
Consultation
STL60P4LLF6

STL60P4LLF6-ST(意法半导体)

  • TypeField effect transistor (MOSFET)
  • ModelSTL60P4LLF6
  • PackagePowerFlat-8
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STL60P4LLF6封装PowerFlat-8类型1个P沟道漏源电压(Vdss)40V连续漏极电流(Id)60A功率(Pd)100W导通电阻(RDS(on)@Vgs,Id)14mΩ@6.5A,10V阈值电压(Vgs(th)@Id)1V@250uA栅极电荷(Qg@Vgs)34nC@4.5V输入电容(Ciss@Vds)3.525nF@25V
  • PDF STL60P4LLF6.pdf
Consultation
STS1DNC45STS1DNC45

STS1DNC45STS1DNC45-ST(意法半导体)

  • TypeField effect transistor (MOSFET)
  • ModelSTS1DNC45STS1DNC45
  • PackageSOIC-8
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STS1DNC45封装SOIC-8类型2个N沟道漏源电压(Vdss)450V连续漏极电流(Id)400mA功率(Pd)1.6W导通电阻(RDS(on)@Vgs,Id)4.1Ω@10V,500mA阈值电压(Vgs(th)@Id)3.7V@250uA栅极电荷(Qg@Vgs)10nC@10V输入电容(Ciss@Vds)160pF@25V反向传…
  • PDF STS1DNC45STS1DNC45.pdf
Consultation
STW12N120K5

STW12N120K5-ST(意法半导体)

  • TypeField effect transistor (MOSFET)
  • ModelSTW12N120K5
  • PackageTO-247-3
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STW12N120K5封装TO-247-3类型1个N沟道漏源电压(Vdss)1.2kV连续漏极电流(Id)12A功率(Pd)250W导通电阻(RDS(on)@Vgs,Id)620mΩ@10V,6A阈值电压(Vgs(th)@Id)5V@100uA栅极电荷(Qg@Vgs)44.2nC@10V输入电容(Ciss@Vds)1.37nF@100V反向…
  • PDF STW12N120K5.pdf
Consultation
STP4NK60ZFP

STP4NK60ZFP-ST(意法半导体)

  • TypeField effect transistor (MOSFET)
  • ModelSTP4NK60ZFP
  • PackageTO-220F
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STP4NK60ZFP封装TO-220F类型1个N沟道漏源电压(Vdss)600V连续漏极电流(Id)4A功率(Pd)25W导通电阻(RDS(on)@Vgs,Id)2Ω@10V,2A阈值电压(Vgs(th)@Id)4.5V@50uA栅极电荷(Qg@Vgs)26nC@10V输入电容(Ciss@Vds)510pF@25V
  • PDF STP4NK60ZFP.pdf
Consultation
STS6NF20V

STS6NF20V-ST(意法半导体)

  • TypeField effect transistor (MOSFET)
  • ModelSTS6NF20V
  • PackageSO-8
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STS6NF20V封装SO-8类型1个N沟道漏源电压(Vdss)20V连续漏极电流(Id)6A功率(Pd)2.5W导通电阻(RDS(on)@Vgs,Id)40mΩ@4.5V,3A阈值电压(Vgs(th)@Id)600mV@250uA栅极电荷(Qg@Vgs)11.5nC@4.5V输入电容(Ciss@Vds)460pF@15V
  • PDF STS6NF20V.pdf
Consultation
STW48NM60N

STW48NM60N-ST(意法半导体)

  • TypeField effect transistor (MOSFET)
  • ModelSTW48NM60N
  • PackageTO-247AC-3
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STW48NM60N封装TO-247AC-3类型1个N沟道漏源电压(Vdss)600V连续漏极电流(Id)44A功率(Pd)330W导通电阻(RDS(on)@Vgs,Id)70mΩ@10V,20A阈值电压(Vgs(th)@Id)4V@250uA
  • PDF STW48NM60N.pdf
Consultation
STD3NK90ZT4

STD3NK90ZT4-ST(意法半导体)

  • TypeField effect transistor (MOSFET)
  • ModelSTD3NK90ZT4
  • PackageTO-252-2(DPAK)
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STD3NK90ZT4封装TO-252-2(DPAK)类型1个N沟道漏源电压(Vdss)900V连续漏极电流(Id)3A功率(Pd)90W导通电阻(RDS(on)@Vgs,Id)4.8Ω@10V,1.5A阈值电压(Vgs(th)@Id)4.5V@50uA栅极电荷(Qg@Vgs)22.7nC@10V输入电容(Ciss@Vds)590pF@25V…
  • PDF STD3NK90ZT4.pdf
Consultation
STP6NK90Z

STP6NK90Z-ST(意法半导体)

  • TypeField effect transistor (MOSFET)
  • ModelSTP6NK90Z
  • PackageTO-220
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STP6NK90Z封装TO-220类型1个N沟道漏源电压(Vdss)900V连续漏极电流(Id)5.8A功率(Pd)140W导通电阻(RDS(on)@Vgs,Id)2Ω@10V,2.9A阈值电压(Vgs(th)@Id)4.5V@100uA栅极电荷(Qg@Vgs)60.5nC@10V输入电容(Ciss@Vds)1.35nF@25V工作温度…
  • PDF STP6NK90Z.pdf
Consultation
STP10NK60ZFP

STP10NK60ZFP-ST(意法半导体)

  • TypeField effect transistor (MOSFET)
  • ModelSTP10NK60ZFP
  • PackageTO-220F
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STP10NK60ZFP封装TO-220F类型1个N沟道漏源电压(Vdss)600V连续漏极电流(Id)10A功率(Pd)35W导通电阻(RDS(on)@Vgs,Id)750mΩ@10V,4.5A阈值电压(Vgs(th)@Id)4.5V@250uA栅极电荷(Qg@Vgs)70nC@10V输入电容(Ciss@Vds)1.37nF@25V工作…
  • PDF STP10NK60ZFP.pdf
Consultation
STW20NK50Z

STW20NK50Z-ST(意法半导体)

  • TypeField effect transistor (MOSFET)
  • ModelSTW20NK50Z
  • PackageTO-247AC-3
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STW20NK50Z封装TO-247AC-3类型1个N沟道漏源电压(Vdss)500V连续漏极电流(Id)17A功率(Pd)190W导通电阻(RDS(on)@Vgs,Id)270mΩ@10V,8.5A阈值电压(Vgs(th)@Id)4.5V@100uA
  • PDF STW20NK50Z.pdf
Consultation
STF13N65M2

STF13N65M2-ST(意法半导体)

  • TypeField effect transistor (MOSFET)
  • ModelSTF13N65M2
  • PackageTO-220FP
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STF13N65M2封装TO-220FP类型1个N沟道漏源电压(Vdss)650V连续漏极电流(Id)10A功率(Pd)25W导通电阻(RDS(on)@Vgs,Id)430mΩ@5A,10V阈值电压(Vgs(th)@Id)4V@250uA栅极电荷(Qg@Vgs)17nC@10V输入电容(Ciss@Vds)590pF@100V反向传输电…
  • PDF STF13N65M2.pdf
Consultation
STB6NK90ZT4

STB6NK90ZT4-ST(意法半导体)

  • TypeField effect transistor (MOSFET)
  • ModelSTB6NK90ZT4
  • PackageD2PAK
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STB6NK90ZT4封装D2PAK类型1个N沟道漏源电压(Vdss)900V连续漏极电流(Id)5.8A功率(Pd)140W导通电阻(RDS(on)@Vgs,Id)2Ω@2.9A,10V阈值电压(Vgs(th)@Id)4.5V@100uA栅极电荷(Qg@Vgs)60.5nC@10V输入电容(Ciss@Vds)1.35nF@25V反向传…
  • PDF STB6NK90ZT4.pdf
Consultation
STD45P4LLF6AG

STD45P4LLF6AG-ST(意法半导体)

  • TypeField effect transistor (MOSFET)
  • ModelSTD45P4LLF6AG
  • PackageDPAK
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STD45P4LLF6AG封装DPAK类型1个P沟道漏源电压(Vdss)40V连续漏极电流(Id)50A功率(Pd)58W导通电阻(RDS(on)@Vgs,Id)15mΩ@25A,10V阈值电压(Vgs(th)@Id)2.5V@250uA栅极电荷(Qg@Vgs)65.5nC@10V输入电容(Ciss@Vds)3.525nF@25V工作温…
  • PDF STD45P4LLF6AG.pdf
Consultation
STD40NF10

STD40NF10-ST(意法半导体)

  • TypeField effect transistor (MOSFET)
  • ModelSTD40NF10
  • PackageDPAK
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STD40NF10封装DPAK类型1个N沟道漏源电压(Vdss)100V连续漏极电流(Id)50A功率(Pd)125W导通电阻(RDS(on)@Vgs,Id)25mΩ@10V,25A阈值电压(Vgs(th)@Id)4V@250uA栅极电荷(Qg@Vgs)62nC@10V输入电容(Ciss@Vds)2.18nF@25V反向传输电容(…
  • PDF STD40NF10.pdf
Consultation
STF33N60M2

STF33N60M2-ST(意法半导体)

  • TypeField effect transistor (MOSFET)
  • ModelSTF33N60M2
  • PackageTO-220FP-3
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STF33N60M2封装TO-220FP-3类型1个N沟道漏源电压(Vdss)600V连续漏极电流(Id)26A功率(Pd)35W导通电阻(RDS(on)@Vgs,Id)125mΩ@13A,10V阈值电压(Vgs(th)@Id)4V@250uA栅极电荷(Qg@Vgs)45.5nC@10V输入电容(Ciss@Vds)1.781nF@100V工…
  • PDF STF33N60M2.pdf
Consultation
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